LC573102A 查看數據表（PDF） - SANYO -> Panasonic
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LC573102A Datasheet PDF : 16 Pages
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LC573104A, 573102A
Electrical Characteristics at Ta =–30 to +70˚C, VSS=0V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ max
Input impedance
RIN1A
RIN1B
VDD=2.9V, VIL=0.4V, S1 to S4, M1 to M4, 'L' level
Hold Tr, Fig. 3
VDD=2.9V, VIL=0.4V, S1 to S4, M1 to M4, 'L' level
pull-down Tr, Fig. 3
150 300 1000 kΩ
30
50 100 kΩ
Output high-level voltage
Output off-leak current
Output high-level voltage
Output off-leak current
Output current (H)
Output current (L)
HALT-mode supply current
Operating current
RIN2 VDD=2.9V, RES
10
300 kΩ
VOH1 VDD=2.9V, IOH=–450µA, P00 to P03, P10 to P13
VDD–0.45
V
IOFF
IOFF
VDD=2.9V, P00 to P03, P10 to P13
VIN=VSS
VIN=VDD
–1.0
1.0 µA
µA
VOH2 VDD=2.9V, IOH=–10mA, P20, P21
VDD–0.5
V
IOFF
IOFF
VDD=2.9V, P20, P21
VIN=VSS
VIN=VDD
–1.0
1.0 µA
µA
IOH1 VDD=3.0V, VOH=VDD–1.5V, CA
6
12
mA
IOL1 VDD=3.0V, VOH=0.9V, CA
2
5
mA
IDD1
VDD=3.0V, 455kHz CR oscillation, Ccd=Ccg=150pF,
Ta≤50°C, Fig.5
80 300 µA
IDD2
VDD=3.0V, 455=kHz CR oscillation, Ccd=Ccg=150pF,
Ta≤50°C, Fig.5
150 500 µA
Supply leak current 1
Supply leak current 2
Oscillator start-up voltage
Oscillator sustaining voltage
Oscillator start-up time
ILEAK1
ILEAK2
VST
VSUS
tST
VDD=3.0V
Ta=25°C
Ta=50°C
Ccd=Ccg=150pF, 455kHz CR oscillation, Fig. 4
VDD=2.3V, Ccd=Ccg=150pF, 455kHz CR oscillation,
Fig. 4
0.2
1 µA
1
5 µA
2.3 V
2.0
V
30 ms
Recommended Oscillators.
Oscillator
Manufacturer Part number
455kHz ceramic Kyocera
oscillator
Murata
KBR-455BK/Y
CSB455E
Fuji Ceramics POE-455
Ccg Ccd
150pF 150pF
150pF 150pF
150pF 150pF
Electrical Characteristics at Ta =–30 to +70˚C, VSS=0V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ max
Input impedance
Output high-level voltage
Output off-leak current
Output high-level voltage
Output off-leak current
Output current (H)
Output current (L)
HALT-mode supply current
Operating current
Supply leak current 1
Supply leak current 2
Oscillator start-up voltage
Oscillator sustaining voltage
Oscillator start-up time
RIN1A
VDD=5.0V, VIL=0.4V, S1 to S4, M1 to M4, 'L' level
Hold Tr, Fig. 3
70 200 600 kΩ
RIN1B
VDD=5.0V, S1 to S4, M1 to M4, 'L' level pull-down Tr,
Fig. 3
30
50 100 kΩ
RIN2 VDD=5.0V, RES
10
300 kΩ
VOH1 VDD=5.0V, IOH=–750µA, P00 to P03, P10 to P13
VDD–0.75
V
IOFF
IOFF
VDD=5.0V, P00 to P03, P10 to P13
VIN=VSS
VIN=VDD
–1.0
1.0 µA
µA
VOH2
IOFF
IOFF
VDD=5.0V, IOH=–10mA, P20, P21
VDD=5.0V, P20, P21
VIN=VSS
VIN=VDD
VDD–0.5
–1.0
V
1.0 µA
µA
IOH1 VDD=5.0V, VOH=VDD–2.5V, CA
10
20
mA
IOL1
IDD1
VDD=5.0V, VOL=0.9V, CA
VDD=5.0V, 455kHz CR oscillation, Ccd=Ccg=150pF,
Ta≤50°C, Fig.5
2
5
mA
300 400 µA
IDD2
VDD=5.0V, 455kHz CR oscillation, Ccd=Ccg=150pF,
Ta≤50°C, Fig.5
400 500 µA
ILEAK1
ILEAK2
VDD=5.0V
Ta=25°C
Ta=50°C
0.2
1 µA
1
5 µA
VST
Ccd=Ccg=150pF, 455kHz CR oscillation, Fig. 4
VSUS
2.0
tST
VDD=2.3V, Ccd=Ccg=150pF, 455kHz CR oscillation,
Fig. 4
2.3 V
V
30 ms
No.4144–10/16
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