EGP10A 查看數據表（PDF） - Vishay Semiconductors

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EGP10A

Glass Passivated Ultrafast Plastic Rectifier

Vishay Semiconductors 

EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G

www.vishay.com

Vishay General Semiconductor

Glass Passivated Ultrafast Plastic Rectifier

SUPERECTIFIER®

DO-204AL (DO-41)

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

IF(AV)

VRRM

IFSM

trr

VF

TJ max.

Package

1.0 A

50 V, 100 V, 150 V, 200 V, 300 V, 400 V

30 A

50 ns

0.95 V, 1.25 V

150 °C

DO-204AL (DO-41)

Diode variations

Single die

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G

Maximum repetitive peak reverse voltage

VRRM

50

100

150

200

300

400

Maximum RMS voltage

VRMS

35

70

105

140

210

280

Maximum DC blocking voltage

VDC

50

100

150

200

300

400

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C

IF(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

IFSM

30

Operating junction and storage temperature range TJ, TSTG

- 65 to + 150

UNIT

V

V

V

A

A

°C

Revision: 15-Aug-13

1

Document Number: 88582

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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