MMBT6428LT1 查看數據表（PDF） - Leshan Radio Company

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MMBT6428LT1

Amplifier Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

MMBT6428LT1 MMBT6429LT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

ON CHARACTERISTICS

DC Current Gain

(I C = 0.01 mAdc, V CE = 5.0 Vdc)

hFE

MMBT6428

MMBT6429

(I C = 0.1 mAdc, V CE = 5.0Vdc)

MMBT6428

MMBT6429

(I C = 1.0 mAdc, V CE = 5.0Vdc)

MMBT6428

MMBT6429

(I C = 10 mAdc, V CE = 5.0Vdc)

MMBT6428

MMBT6429

Collector–Emitter Saturation Voltage

(I C = 10 mAdc, I B = 0.5 mAdc)

(I C = 100 mAdc, I B = 0.5 mAdc)

Base–Emitter On Voltage

(I C = 1.0 mAdc, V CE = 5.0mAdc)

VCE(sat)

V BE(on)

SMALL–SIGNAL CHARACTERISTICS

Current Gain–Bandwidth Product

(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

Input Capacitance

(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)

fT

C obo

C ibo

Min

250

500

250

500

250

500

250

500

––

––

0.56

100

––

––

Max

Unit

––

—

—

650

1250

—

—

—

—

Vdc

0.2

0.6

0.66

Vdc

700

MHz

3.0

pF

8.0

pF

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

M22–2/4

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