PIP3201-A 查看數據表（PDF） - Philips Electronics
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PIP3201-A Datasheet PDF : 13 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
100E-6 IB / A
10E-6
1E-6
max.
typ.
100E-9
10E-9
1E-9
100E-12
-50
0
50
100
150
200
Tj / OC
Fig.10. Typical supply quiescent current.
IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V
100E-6 IL / A
10E-6
1E-6
max.
typ.
100E-9
10E-9
1E-9
00E-12
10E-12
-50
0
50 Tj / OC 100
150
200
Fig.11. Typical off-state leakage current.
IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.
100E-6 IS / A
10E-6
1E-6
max.
typ.
100E-9
10E-9
1E-9
-50
0
50 Tj / OC 100
150
200
Fig.12. Status leakage current.
IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
Product data
PIP3201-A
IL(OC) / A
1.6
1.2
0.8
max.
typ.
0.4
min.
0.0
-50
0
50 Tj / OC 100
150
200
Fig.13. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG ≥ 9 V
VBG(UV) / V
5.5
4.5
typ.
3.5
on
off
2.5
-50
0
50 Tj / OC 100
150
200
Fig.14. Supply undervoltage thresholds.
VBG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤ 2 V
55 VBG(OV) / V
50
45
40
max.
on
off
min.
35
-50
0
50 Tj / OC 100
150
200
Fig.15. Supply overvoltage thresholds.
VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA
May 2001
8
Rev 1.010
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