10500 查看數據表（PDF） - GHz Technology
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10500 Datasheet PDF : 3 Pages
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10500
500 Watts, 50 Volts, Pulsed
Avionics 1030 / 1090 MHz
GENERAL DESCRIPTION
The 10500 is a high power COMMON BASE BiPolar transistor. It is
designed for pulsed systems in the frequency band 1025 - 1150 MHz, with the
pulse width and duty required for MODE-S, TACAN & TCAS applications.
The device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
1700 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
40 Amps
- 65 to + 200oC
+ 230oC
CASE OUTLINE
55ST Style 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
Pd
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 32 µsec
DF = 2%
F = 1090 MHz
MIN
500
8.5
TYP
50
0.5
MAX UNITS
Watts
70 Watts
dB
%
dB
4:1
BVebo* Emitter to Base Breakdown
Ie = 50 mA
3.5
BVces
Collector to Emitter Breakdown Ic = 100 mA
65
hFE*
θjc1
DC - Current Gain
Thermal Resistance
Ic = 5 A, Vce = 5 V
20
Note 1: At rated output power and pulse conditions
*: Not measurable due to internal EB returns
Issue C, November 3, 1997
Volts
Volts
0.12 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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