LP62S16256F-I 查看數據表（PDF） - AMIC Technology

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LP62S16256F-I

256K X 16 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

Absolute Maximum Ratings*

VCC to GND .............................................. -0.5V to +4.0V

IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V

Operating Temperature, Topr ...................-40°C to +85°C

Storage Temperature, Tstg.....................-55°C to +125°C

Power Dissipation, PT....................................................................... 0.7W

LP62S16256F-I Series

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification is

not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may affect

device reliability.

DC Electrical Characteristics (TA = -40°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V)

Symbol

Parameter

Input Leakage Current

⏐ILI⏐

⏐ILO⏐ Output Leakage Current

LP62S16256F-55LLI / 70LLI Unit

Min.

Typ.

Max.

Conditions

-

-

1

µA VIN = GND to VCC

CE = VIH

-

-

1

µA HB = VIH or OE = VIH or

WE = VIH

VI/O = GND to VCC

ICC Active Power Supply Current

-

-

5

mA CE = VIL, II/O = 0mA

ICC1

-

Dynamic Operating Current

25

40

mA Min. Cycle, Duty = 100%

CE = VI, II/O = 0mA

ICC2

-

5

8

mA

CE = VIL, VIH = VCC,

VIL = 0V, f = 1MHz,

II/O = 0 mA

ISB

Standby Current

ISB1

-

-

1

mA CE = VIH

VCC ≤ 3.3V

-

0.3

10

µA CE ≥ VCC - 0.2V,

VCC ≤ 3.3V

VIN ≥ 0V

VOL Output Low Voltage

-

-

0.4

V IOL = 2.1 mA

VOH Output High Voltage

2.2

-

-

V IOH = -1.0 mA

PRELIMINARY (August, 2004, Version 0.4)

4

AMIC Technology, Corp.

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