LT5511 查看數據表（PDF） - Linear Technology
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LT5511 Datasheet PDF : 16 Pages
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LT5511
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
1.9GHz Application: (Test Circuit Shown in Figure 3) VCC = 5VDC, EN = High, TA = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1.95GHz at –10dBm,
RF Output Measured at 1900MHz, unless otherwise noted. (Notes 3, 4)
IF Input Return Loss
LO Input Power
With External Matching, ZO = 50Ω
14
dB
–15 to –5
dBm
LO Input Return Loss
RF Output Return Loss
Conversion Gain
With External Matching, ZO = 50Ω
With External Matching, ZO = 50Ω
11.5
dB
11.5
dB
– 0.7
dB
LO to RF Leakage
– 47
dBm
Input 1dB Compression
5.2
dBm
Input 3rd Order Intercept
Two-Tone, –5dBm/Tone, ∆f = 1MHz
15.5
dBm
Input 2nd Order Intercept
Single-Tone, –5dBm
51
dBm
SSB Noise Figure
14
dB
Power Supply Requirements: VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted.
Supply Voltage
Supply Current
4.0 to 5.25
VDC
56
65
mA
Shutdown Current (Chip Disabled)
EN = Low
1
30
µA
Enable Mode Threshold
Disable Mode Threshold
Turn ON Time (Note 5)
EN = High
EN = Low
3
VDC
0.5
VDC
2
µs
Turn OFF Time (Note 5)
6
µs
Enable Input Current
EN = 5V
1
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: External components on the final test circuit are optimized for
operation at fRF = 950MHz, fLO = 1GHz and fIF = 50MHz (Figure 2).
Note 3: Specifications over the – 40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: External components on the final test circuit are optimized for
operation at fRF = 1900MHz, fLO = 1.95GHz and fIF = 50MHz (Figure 3).
Note 5: Turn On and Turn Off times are based on rise and fall times of RF
output envelope from full power to –40dBm with an IF input power of
–5dBm.
Note 6: Part can be used over a broader range of operating frequencies.
Consult factory for applications assistance.
5511i
3
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