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M28F420-100XM6TR 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
比赛名单
M28F420-100XM6TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M28F420-100XM6TR Datasheet PDF : 38 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M28F410, M28F420
Table 13. Read AC Characteristics (1)
(TA = 0 to 70°C or –40 to 85°C; VPP = 12V ± 5%)
Symbol Alt
Parameter
M28F410 / 20
-70
-80
-100
-120
VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10% VCC = 5V ± 10% Unit
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min Max Min Max Min Max Min Max
tAVAV
tRC
Address Valid to
Next Address Valid
70
80
100
120
ns
tAVQV
tACC
Address Valid to
Output Valid
70
80
100
120 ns
tPHQV
tPWH
Power Down High
to Output Valid
300
300
300
300 ns
tELQX (2)
tLZ
Chip Enable Low to
Output Transition
0
0
0
0
ns
tELQV (3)
tCE
Chip Enable Low to
Output Valid
70
80
100
120 ns
tGLQX (2)
tOLZ
Output Enable Low
to Output Transition
0
0
0
0
ns
tGLQV (3)
tOE
Output Enable Low
to Output Valid
35
40
45
50 ns
tEHQX (2)
tOH
Chip Enable High
to Output Transition
0
0
0
0
ns
tEHQZ (2)
tHZ
Chip Enable High
to Output Hi-Z
25
30
35
35 ns
tGHQX (2)
tOH
Output Enable High
to Output Transition
0
0
0
0
ns
tGHQZ (2)
tDF
Output Enable High
to Output Hi-Z
25
30
35
35 ns
tAXQX (2)
tOH
Address Transition
to Output Transition
0
0
0
0
ns
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Sampled only, not 100% tested.
3. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
10/38

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