EBS52EC8APFA-75 查看數據表（PDF） - Elpida Memory, Inc

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EBS52EC8APFA-75

512MB Unbuffered SDRAM DIMM

Elpida Memory, Inc 

EBS52EC8APFA

DC Characteristics1 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)

Parameter

Symbol

Grade max.

Unit

Test condition

Notes

Operating current

ICC1

ICC1

-7A

1440

-75

1260

mA

Burst length = 1

tRC = tRC (min.)

mA

1, 2, 3

Standby current in power down

Standby current in non power

down

Active standby current in power

down

Active standby current in non

power down

ICC2P

ICC2N

ICC3P

ICC3N

54

mA

CKE = VIL, tCK = 12ns

6

360

mA

CKE, /CS = VIH,

tCK = 12ns

4

72

mA

CKE = VIL, tCK = 12ns

1, 2, 6

540

mA

CKE, /CS = VIH,

tCK = 12ns

1, 2, 4

Burst operating current

ICC4

1485

mA

tCK = tCK (min.), BL = 4 1, 2, 5

Refresh current

ICC5

-7A

2520

mA

tRC = tRC (min.)

3

ICC5

-75

2250

mA

Self refresh current

ICC6

54

mA

VIH ≥ VDD – 0.2V

VIL ≤ 0.2V

7

Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output

open condition

2. One bank operation.

3. Input signals are changed once per one clock.

4. Input signals are changed once per two clocks.

5. Input signals are changed once per four clocks.

6. After power down mode, CLK operating current.

7. After self refresh mode set, self refresh current.

DC Characteristics2 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)

Parameter

Input leakage current

Symbol

min.

ILI

–18

Output leakage current

ILO

–3

Output high voltage

Output low voltage

VOH

2.4

VOL

—

max.

18

3

—

0.4

Unit

Test condition

µA

0 ≤ VIN ≤ VDD

µA

0 ≤ VOUT ≤ VDD

DQ = disable

V

IOH = –4mA

V

IOL = 4mA

Notes

Data Sheet E0207E20 (Ver. 2.0)

8

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