M40Z300WMQ1(2000) 查看數據表（PDF） - STMicroelectronics
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M40Z300WMQ1 Datasheet PDF : 16 Pages
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M40Z300, M40Z300W
Table 6B. DC Characteristics for M40Z300W
(TA = 0 to 70°C; VCC = 3V to 3.6V or 2.7V to 3.3V)
Symbol
Parameter
Test Condition
Min Typ
Max
ILI (1) Input Leakage Current
0V ≤ VIN ≤ VCC
±1
ICC
Supply Current
Outputs open
2
4
VIL
Input Low Voltage
–0.3
0.8
VIH
Input High Voltage
2.0
VCC + 0.3
Output Low Voltage
IOL = 4.0mA
0.4
VOL
Output Low Voltage (open drain) (2)
IOL = 10mA
0.4
VOH Output High Voltage
IOH = –2.0mA
2.4
VOHB VOH Battery Back-up (3)
IOUT2 = –1.0µA
2.0
2.9
3.6
VOUT > VCC –0.3
150
IOUT1 VOUT Current (Active)
VOUT > VCC –0.2
100
IOUT2 VOUT Current (Battery Back-up)
VOUT > VBAT –0.3
100
ICCDR Data Retention Mode Current (4)
100
THS Threshold Select Voltage
VSS
VOUT
VPFD
Power-fail Deselect Voltage (THS = VSS)
Power-fail Deselect Voltage (THS = VOUT)
2.8
2.9
3.0
2.5
2.6
2.7
VSO Battery Back-up Switchover Voltage
2.5
Note: 1. Outputs deselected.
2. For RST & BL pins (Open Drain).
3. Chip Enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery back-up mode.
Higher leakage currents will reduce battery life.
4. Measured with VOUT and E1CON - E4CON open.
Unit
µA
mA
V
V
V
V
V
V
mA
mA
µA
nA
V
V
V
V
7/16
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