M40Z300MH6 查看數據表（PDF） - STMicroelectronics

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M40Z300MH6

5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs

STMicroelectronics 

M40Z300, M40Z300W

The M40Z300/W only monitors the battery when a

nominal VCC is applied to the device. Thus appli-

cations which require extensive durations in the

battery back-up mode should be powered-up peri-

odically (at least once every few months) in order

for this technique to be beneficial. Additionally, if a

battery low is indicated, data integrity should be

verified upon power-up via a checksum or other

technique. The BL pin is an open drain output and

an appropriate pull-up resistor to VCC should be

chosen to control the rise time.

VCC Noise And Negative Going Transients

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting in spikes on the VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic by-

pass capacitor value of 0.1µF (as shown in Figure

9.) is recommended in order to provide the needed

filtering.

In addition to transients that are caused by normal

SRAM operation, power cycling can generate neg-

ative voltage spikes on VCC that drive it to values

below VSS by as much as one volt. These negative

spikes can cause data corruption in the SRAM

while in battery backup mode. To protect from

these voltage spikes, STMicroelectronics recom-

mends connecting a schottky diode from VCC to

VSS (cathode connected to VCC, anode to VSS).

Schottky diode 1N5817 is recommended for

through hole and MBRS120T3 is recommended

for surface mount.

Figure 9. Supply Voltage Protection

VCC

0.1µF

VCC

DEVICE

VSS

AI00622

9/21

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