M48Z129V-70PM1(2000) 查看數據表（PDF） - STMicroelectronics
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M48Z129V-70PM1 Datasheet PDF : 13 Pages
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M48Z129Y, M48Z129V
Figure 9. Chip Enable Controlled, Write AC Waveforms
A0-A16
E
W
DQ0-DQ7
tAVEL
tAVWL
tAVAV
VALID
tAVWH
tELEH
tWLWH
tDVWH
DATA INPUT
tEHAX
tWHDX
AI03611
Figure 10. Supply Voltage Protection
VCC
0.1µF
VCC
DEVICE
VSS
AI02169
POWER SUPPLY DECOUPLING AND
UNDERSHOOT PROTECTION
Icc transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1 microfarad is recom-
mended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below Vss by as much as one volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from VCC to Vss (cathode
connected to VCC, anode to Vss). (Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
10/13
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