MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54562WP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
M54562WP
1.5
1.0
0.5
0
0
25
50
75
100
Ambient temperature Ta(℃)
Duty-Cycle-Output current Characteristics
-500
①
-400
-300
-200
•The collector current values
-100
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 25℃
0
0
20
40
60
80
Duty cycle (%)
②
③
④
⑤
⑥
⑦
⑧
100
Grounded Emitter Transfer Characteristics
-500
VS=20V
VS-VO=4V
-400
-300
-200
-100
Ta=75℃
Ta=25℃
Ta=-20℃
0
0
0.2
0.4
0.6
0.8
1.0
Input voltage VI(V)
Output Saturation Voltage
Output Current Characteristics
-500
VS=10V
VI=2.4V
-400
-300
-200
Ta=75℃
Ta=25℃
-100
Ta=-20℃
0
0
0.5
1.0
1.5
2.0
2.5
Output saturation voltage VCE(sat)(V)
Duty-Cycle-Output current Characteristics
-500
①
-400
-300
-200
•The collector
current values
represent the current
-100 per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
0 •Vcc=5V •Ta = 75℃
0
20
40
60
80
②
③
④
⑤
⑦⑥
⑧
100
Duty cycle (%)
Clamping Diode Characteristics
500
400
300
200
Ta=75℃
100
Ta=25℃
Ta=-20℃
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Jul-2011
3