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M54HC590D1 查看數據表(PDF) - STMicroelectronics

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M54HC590D1 Datasheet PDF : 16 Pages
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M54HC590
Test Condition
Symbol
Parameter
VCC CL
(V) (pF)
tREM Minimum Removal 2.0
Time (CCLR)
4.5 50
6.0
Table 7: Capacitive Characteristics
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
28 75
7 15
6 13
95
110
19
22 ns
16
19
Test Condition
Value
Symbol
Parameter
VCC
(V)
CIN Input Capacitance
CPD Power Dissipation
Capacitance (note
1)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5 10
10
10 pF
40
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
Figure 6: Test Circuit
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
TEST
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1Kor equivalent
RT = ZOUT of pulse generator (typically 50)
SWITCH
Open
VCC
GND
9/16

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