M62216GP 查看數據表（PDF） - Renesas Electronics

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M62216GP

Low Voltage Operation STEP-UP DC/DC Converter

Renesas Electronics 

M62216FP/GP

Equation for Constants Calculation

Constants

TON

TOFF

TON + TOFF

TOFF (MIN)

TON (MAX)

lpk

L (MIN)

R1

RD1

RD2

Standard Application Circuit

VO + VF − VIN

VIN − VCE (sat)

1

fOSC

TON + TOFF

1 + TON

TOFF

1

fOSC

− TOFF (MIN)

2×

1 + TON

TOFF

× (lO + lB)

(VIN − VCE (sat))2 × TON (MAX)2 × fOSC

2 × VO × (lO + lB)

VO − 1 × R2

VREF

VO − (VBE + Vsat1)

(lpk/hFE) × A1

VO − (VBE + Vsat2)

(lpk/hFE) × A2

Application Circuit 1

VO + VF − VIN

VIN − VCE (sat)

1

fOSC

TON + TOFF

1 + TON

TOFF

1

fOSC

− TOFF (MIN)

2×

1 + TON

TOFF

× lO

(VIN − VCE (sat))2 × TON (MAX)2 × fOSC

2 × VO × lO

VO − 1 × R2

VREF

VO− (VBE + Vsat1)

(lpk/hFE) × A1

VO − (VBE + Vsat2)

(lpk/hFE) × A2

Application Circuit 2

VO + VF − VIN

VIN − VCE (sat)

1

fOSC

TON + TOFF

1 + TON

TOFF

1

fOSC

− TOFF (MIN)

2×

1 + TON

TOFF

× lO

(VIN − VCE (sat))2 × TON (MAX)2 × fOSC

2 × VO × lO

VO − 1 × R2

VREF

VIN − (VBE + Vsat1)

(lpk/hFE) × A1

VIN − (VBE + Vsat2)

(lpk/hFE) × A2

Constants

TON

TOFF

TON + TOFF

TOFF (MIN)

TON (MAX)

lpk

L (MIN)

R1

RD1

RD2

STEP-DOWN Circuit

VO + VF

VIN − VCE (sat) − VO

1

fOSC

TON + TOFF

1 + TON

TOFF

1

fOSC

− TOFF (MIN)

2 × lO

(VIN − VCE (sat) − VO) × TON (MAX)

∆lO

VO − 1 × R2

VREF

VO − VBE − Vsat1

lpk/hFE

VIN − Vsat2

(lpk/hFE) × A3

Note:

VF: Forward voltage of external diode.

VCE (sat): Saturation voltage of external transistor.

VBE: Voltage between Base - Emitter of external transistor.

hFE: hFE of external transistor at saturating.

A1: Ratio of current into DRIVE1 terminal.

(A1 = 0.8~0.9)

A2: Ratio of current into DRIVE2 terminal.

(A2 = 1 − A1)

A3: Ratio of current into DRIVE2 terminal.

(A3 = 0.1~0.2)

• Set R2 to several kΩ ~ several 10ths kΩ.

• Set current into DRIVE2 terminal more than 100 µA.

(Ipk / hFE) × A2 ≥ 100 µA, (Ipk / hFE) × A3 ≥ 100 µA

• Set ∆IO to 1/5 ~ 1/3 of maximum load current

• The maximum rating of current of external parts (transistor,

diode and inductor) are 1.5 to 2 times of Ipk.

REJ03D0845-0300 Rev.3.00 Jun 15, 2007

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