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MAX17528 查看數據表(PDF) - Maxim Integrated

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MAX17528 Datasheet PDF : 41 Pages
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1-Phase Quick-PWM
Intel IMVP-6.5/GMCH Controllers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, VIN = 12V, VDD = VCC = 5V, CLKEN pullup to 3.3V with 1.9k, SHDN = SLOW = ILIM = PGDIN = VCC, SKIP =
GNDS = PGND = GND, VFB = VCSP = VCSN = 1.200V, D0–D6 set for 1.20V (D0–D6 = 0001100). TA = -40°C to +105°C, unless other-
wise specified.) (Note 2)
PARAMETER
GATE DRIVERS
DH Gate-Driver On-Resistance
DL Gate-Driver On-Resistance
SYMBOL
CONDITIONS
RON(DH)
RON(DL)
BST - LX forced
to 5V
High state (pullup)
Low state (pulldown)
High state (pullup)
Low state (pulldown)
MIN TYP MAX UNITS
2.5

2.0
2.0

0.7
Internal BST Switch
On-Resistance
RBST IBST = 10mA, VDD = 5V
20

CURRENT MONITOR
Current-Monitor
Transconductance
Gm(IMON)
IIMON/(VCSP - VCSN),
VCSN = 0.45V to 2.0V
4.9
5.1
mS
Current-Monitor Offset
Referred to V(CSP, CSN)
IIMON = 0
-1.5
+1.5
mV
IMON Clamp Voltage
LOGIC AND I/O
Logic-Input High Voltage
Logic-Input Low Voltage
Low-Voltage Logic-
Input High Voltage
VIMON IIMON = -1mA
VIH
VIL
VIHLV
PGDIN
PGDIN
SHDN, SKIP, SLOW, D0–D6
1.05
2.3
0.67
1.15
V
V
1.0
V
V
Low-Voltage Logic-
Input Low Voltage
VILLV SHDN, SKIP, SLOW, D0–D6
0.33
V
CLKEN Logic-Input High Voltage
for IMVP-6.5 Startup
2.3
V
CLKEN Logic-Input Low Voltage
for GMCH
1.0
V
Note 2: Limits are 100% production tested at TA = +25°C. Maximum and minimum limits over temperature are guaranteed by design
and characterization.
Note 3: The equation for the target voltage VTARGET is:
VTARGET = the slew-rate-controlled version of VDAC, where VDAC = 0V for shutdown, VDAC = VBOOT (IMVP-6.5) or VVID
(GMCH) during startup, and VDAC = VVID otherwise (the VVID voltages for all possible VID codes are given in Table 2).
In pulse-skipping mode, the output rises by approximately 1.5% when transitioning from continuous conduction to no load.
Note 4: On-time and minimum off-time specifications are measured from 50% to 50% at the DH pin, with LX forced to 0V, BST forced
to 5V, and a 500pF capacitor from DH to LX to simulate external MOSFET gate capacitance. Actual in-circuit times can be
different due to MOSFET switching speeds.
8 _______________________________________________________________________________________

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