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MC74HCT14A(2000) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
比赛名单
MC74HCT14A
(Rev.:2000)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74HCT14A Datasheet PDF : 6 Pages
1 2 3 4 5 6
MC74HCT14A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to VCC + 0.5 V
– 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air,
Plastic DIP†
750
mW
SOIC Package†
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Plastic DIP or SOIC Package)
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA
Operating Temperature, All Package Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf Input Rise and Fall Time (Figure 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ [ *No Limit when Vin 50% VCC, ICC > 1 mA.
Min Max Unit
4.5 5.5 V
0 VCC V
– 55 + 125 _C
*
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
VCC
Volts
– 55 to
25_C
Min Max
v 85_C
Min Max
v 125_C
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v VT+ max MaximumPositive–Going Vout = 0.1 V or VCC – 0.1 V
Input Threshold Voltage |Iout| 20 µA
4.5
5.5
1.9
2.1
1.9
2.1
1.9 V
2.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v VT+min MinimumPositive–Going
Input Threshold Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
4.5 1.2
5.5 1.4
1.2
1.4
1.2
1.4
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v VT– max Maximum Positive–Going Vout = 0.1 V or VCC – 0.1 V
Input Threshold Voltage |Iout| 20 µA
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v VT–min MinimumPositive–Going
Input Threshold Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
4.5 0.5
5.5 0.6
0.5
0.6
0.5
0.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VH max MaximumHysteresis
Voltage
v Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
4.5
5.5
1.4
1.5
1.4
1.5
1.4
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VHmin MinimumHysteresis
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
v Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
4.5 0.4
5.5 0.4
0.4
0.4
0.4
04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOH
Minimum High–Level
Output Voltage
v Vin < VT–min
|Iout| 20 µA
4.5 4.4
4.4
4.4
V
5.5 5.4
5.4
5.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v Vin < VT–min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |Iout| 4.0 mA
4.5 3.98
3.84
3.7
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
(continued)
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