CHA2295 查看數據表（PDF） - United Monolithic Semiconductors

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CHA2295

6-11GHz Buffer Splitter Amplifier

United Monolithic Semiconductors 

CHA2295

6-11GHz Buffer Splitter Amplifier

Electrical Characteristics for Broadband Operation

Tamb=+25°C, Vd=3.5V Vg tuned for Id=160mA

Symbol

Parameter

Fop

Operating frequency range (1)

Min Typ Max Unit

6

11

GHz

G

Small signal gain (1)

15

18

dB

∆G

Small signal gain flatness (1)

±1.5

dB

Is

Reverse isolation (1)

60

dB

Ic

Isolation between channels (1)

18

dB

Psat

Saturated output power (1)

+12 +14

dBm

VSWRin Input VSWR (1)

2.0:1

VSWRout Output VSWR (1)

2.3:1

Id_small signal Bias current

160

220

mA

(1) These values are representative for on-wafer measurements that are made without bonding

wires at the RF ports.

Absolute Maximum Ratings

Tamb=25°C (1)

Symbol

Parameter

Values

Unit

Vds

Maximum Drain bias voltage

4.0

V

Ids

Maximum drain bias current

250

mA

Vgs

Gate bias voltage

-2.5 to +0.4

V

Vdg

Maximum drain to gate voltage (Vd - Vg))

+5

V

Pin

Maximum input power overdrive (2)

+15

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA22957262 - 19 Sep 07

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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