DTA6-N 查看數據表（PDF） - SANYO -> Panasonic
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DTA6-N Datasheet PDF : 3 Pages
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Ordering number : EN1874C
Silicon Planar Type
DTA6-N
6A Bidirectional Thyristor
Features
• Peak OFF-state voltage : 200 to 600V
• RMS ON-state current : 6A
• TO-220 package.
Absolute Maximum Ratings at Ta=25°C
DTA6C-N DTA6E-N DT6AG-N unit
Repetitive Peak
VDRM
200
400
600 V
OFF-StateVoltage
RMS ON-State Current
IT(RMS) Tc=104°C, single-phase
→
→
6A
full-wave
Surge ON-State Current
Amperes Squared-Seconds
ITSM
∫ i2T·dt
Peak 1 cycle, 50Hz
1ms≤t≤10ms
→
→
→
→
60 A
18 A2s
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Junction Temperature
PGM
PG(AV)
IGM
VGM
Tj
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
→
→
5W
→
→
0.5 W
→
→
±2 A
→
→
±10 V
→
→
125 °C
Strage Temperature
Tstg
→ –40 to +125 °C
Weght
→
→
1.8 g
Electrical Characteristics at Ta=25°C
Repetitive Peak
OFF-State Current
IDRM
Peak ON-State Voltage
Critical Rate of Rise of
VTM
dv/dt
OFF-State Voltage
Holding Current
Gate Trigger Current (I)
(II)
(III)
(IV)
Gate Trigger Voltage (I)
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
IH
IGT
IGT
IGT
IGT
VGT
VGT
VGT
VGT
VGD
Rth(j-c)
* : The gate trigger mode is shown below.
Trigger mode
I
II
III
IV
T2 T1 G
+–+
+––
–++
–+–
Tj=125°C, VD=VDRM
min typ max
2
ITM=9A
1.5
Tj=125°C, VD=200V (C),
10
400V (E to G)
RL=100Ω
50
VD=12V, RL=20Ω
30
VD=12V, RL=20Ω
30
VD=12V, RL=20Ω
50
VD=12V, RL=20Ω
30
VD=12V, RL=20Ω
2
VD=12V, RL=20Ω
2
VD=12V, RL=20Ω
2
VD=12V, RL=20Ω
2
Tc=125°C, VD=Rated voltage
0.2
Between junction and case, AC
2
Package Dimensions 1155A
(unit : mm)
unit
mA
V
V/µ s
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1874-1/3
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