MMBT6428LT1 查看數據表（PDF） - ON Semiconductor
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MMBT6428LT1 Datasheet PDF : 6 Pages
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MMBT6428LT1, MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT6428
MMBT6429
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
MMBT6428
MMBT6429
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT6428
MMBT6429
Symbol
V(BR)CEO
V(BR)CBO
ICES
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Cibo
Min
Max
Unit
Vdc
50
−
45
−
Vdc
60
−
55
−
mAdc
−
0.1
mAdc
−
0.01
mAdc
−
0.01
−
250
−
500
−
250
650
500 1250
250
−
500
−
250
−
500
−
Vdc
−
0.2
−
0.6
Vdc
0.56 0.66
MHz
100
700
pF
−
3.0
pF
−
8.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
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