MMDF2N06V 查看數據表（PDF） - Motorola => Freescale
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MMDF2N06V Datasheet PDF : 4 Pages
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MMDF2N06V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60
—
—
—
66
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
100
nAdc
VGS(th)
Vdc
2.0
2.8
4.0
—
5.8
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 10 Vdc, ID = 1.7 Adc, TJ = 150°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.7 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 48 Vdc, ID = 3.3 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.3 Adc, VGS = 0 Vdc)
(IS = 3.3 Adc, VGS = 0 Vdc, TJ =
150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Ohm
—
0.106 0.115
Vdc
—
—
0.5
—
—
0.4
4.0
7.0
—
Mhos
—
370
520
pF
—
110
150
—
25
50
—
9.0
20
ns
—
7.0
10
—
34
70
—
18
40
—
15
20
nC
—
3.0
—
—
4.0
—
—
5.0
—
—
0.82
1.2
Vdc
—
0.64
—
Reverse Recovery Time
(IS = 3.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
—
39
—
ns
—
33
—
—
6.0
—
—
0.075
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data
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