MMDF2P02HD(2011) 查看數據表（PDF） - ON Semiconductor
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MMDF2P02HD Datasheet PDF : 8 Pages
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MMDF2P02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
trr
(VDD = 15 V, IS = 2.0 A,
ta
dIS/dt = 100 A/ms)
tb
QRR
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.max.
5. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
20
−
−
25
Vdc
−
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
100
nAdc
Vdc
1.0
1.5
2.0
−
4.0
−
mV/°C
W
−
0.118 0.160
−
0.152 0.180
2.0
3.0
−
mhos
−
420
588
pF
−
290
406
−
116
232
−
19
38
ns
−
66
132
−
25
50
−
37
74
−
11
22
−
21
42
−
45
90
−
36
72
−
15
20
nC
−
1.2
−
−
5.0
−
−
4.0
−
Vdc
−
1.5
2.1
−
1.24
−
−
38
−
ns
−
17
−
−
21
−
−
0.034
−
mC
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