GLT4160L04-50TC 查看數據表（PDF） - G-Link Technology
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GLT4160L04-50TC Datasheet PDF : 22 Pages
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G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Nov 2001 (Rev.3.2)
AC Characteristics
Parameter
Data Set-Up Time
Data Hold Time
Data Hold Time Referenced to RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay
RAS to CAS Precharge Time
CAS precharge time ( CAS Before RAS counter
test cycle)
Access Time from CAS Precharge
EDO Page Mode Cycle Time
EDO Page Mode Read-Modify-Write Cycle Time
CAS Precharge Time (EDO Page Mode)
RAS Pulse Width (EDO Page Mode Only)
RAS Hold Time from CAS precharge
Access Time from OE
OE to Data Delay Time
OE to Output Low-Z
OE to Output High-Z
WE to Data Delay
OE Command Hold Time
Data Output Hold after CAS low
RAS to Output High-Z
WE to Output High-Z
OE to CAS Hold Time
CAS Hold Time to OE
OE Precharge Time
WE Puts width (EDO mixed read write cycle)
CAS Set-Up Time for CAS -before- RAS Cycle
40
50
60
70
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
tDS
0
0
0
0
ns 10
tDH
7
8
10
15
ns 10
tDHR
36
40
45
50
ns
tRWD 54
67
79
94
ns
tCWD 24
30
34
44
ns
tAWD
32
42
49
59
ns
tCPWD 47
47
54
64
ns
tRPC
5
5
5
5
ns
tCPT
20
20
20
25
ns
tCPA
tPC
tPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOLZ
tOEZ
tWED
tOEH
tDOH
tREZ
tWEZ
tOCH
tCHO
tOEP
tWPE
tCSR
22
28
35
40 ns
18
20
25
30
ns
50
47
56
71
ns
6
8
10
10
ns
40 100k 50 100k 60 100k 70 100k ns
30
30
35
40
ns
12
13
15
20 ns
8
13
15
20
ns
3
3
3
3
ns
3 8 3 13 3 15 3 20 ns
15
15
15
20
ns
7
13
15
20
ns
3
5
5
5
ns
3 8 3 13 3 15 3 20 ns
3 10 3 13 3 15 3 20 ns
5
5
5
5
ns
5
5
5
5
ns
5
5
5
5
ns
5
5
5
5
ns
5
5
5
5
ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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