MS1451 查看數據表（PDF） - Advanced Power Technology

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MS1451

RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

800-960 MHz BASE STATION APPLICATIONS

Features

• 800-960 MHz

• 24 VOLTS

• CLASS AB LINEAR OPERATION

• POUT = 15 WATTS

• GP = 8.0 dB MINIMUM

• COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1451 is a gold metallized silicon NPN planar transistor

designed for high linearity Class AB operation in cellular

base station applications. The MS1451 is designed as a

medium power output device or as the driver for MS1452.

Diffused emitter ballast resistors provide thermal stability

and reliability under Class AB linear operation.

MS1451

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

VCBO

VCEO

VCES

VEBO

PDISS

IC

TJ

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Device Current

Junction Temperature

TSTG

Storage Temperature

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

Value

48

30

45

3.5

29

2.5

+200

-65 to +150

6.0

Unit

V

V

V

V

W

A

°C

°C

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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