MS1506 查看數據表（PDF） - Advanced Power Technology
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MS1506 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 160 MHz
• 13.6 VOLTS
• POUT = 40 WATTS
• GP = 9.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1506 is a 13.6 volt Class C epitaxial silicon NPN planar
transistor designed primarily for VHF communications. The
MS1506 utilizes an emitter ballasted die geometry to withstand
severe load mismatch conditions.
MS1506
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
36
18
36
4.0
8.0
70
+200
-65 to +150
1.2
V
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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