MS1227 查看數據表（PDF） - Advanced Power Technology
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MS1227 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 12.5 VOLTS
• GOLD METALIZATION
• POUT = 20 W MINIMUM
• GP = 15 dB
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
MS1227
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
Value
36
18
4.0
4.5
80
+200
-65 to +150
2.2
MS1227.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
A
W
°C
°C
° C/W
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