MS1251 查看數據表（PDF） - Advanced Power Technology
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MS1251 Datasheet PDF : 6 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 45 WATTS
• GP = 6.5 dB MINIMUM
• INPUT MATCHED
• COMMON EMITTER CONFIGURATION
• VSWR = 20:1
DESCRIPTION:
The MS1251 is an epitaxial silicon NPN planar transistor designed
primarily for 12.5 V, Class C VHF communications. This device utilizes
diffused emitter resistors to achieve 20:1 VSWR capability at rated
operating conditions.
MS1251
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VCES
Collector - Emitter Voltage
VEBO
Emitter - Base Voltage
IC
Device Current
PDISS
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-Case Thermal Resistance
Value
36
18
36
4.0
6.0
145
+200
-65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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