MS1253 查看數據表（PDF） - Advanced Power Technology

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MS1253

RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

HF/VHF APPLICATIONS

Features

• 50 MHz

• 12.5 VOLTS

• POUT = 70 WATTS

• Gp = 10 dB MINIMUM

• COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1253 is a 12.5 V Class C epitaxial silicon NPN

transistor designed primarily for land mobile transmitter

applications. This device utilizes emitter ballasting, is

extremely stable and capable of withstanding high VSWR

under operating conditions.

MS1253

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

VCBO

VCEO

VEBO

PDISS

IC

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Device Current

TJ

Junction Temperature

TSTG

Storage Temperature

Value

45

18

3.5

183

12.0

200

-65 to +150

Unit

V

V

V

W

A

°C

°C

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

1.05

° C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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