MS1261 查看數據表（PDF） - Advanced Power Technology
零件编号
产品描述 (功能)
比赛名单
MS1261 Datasheet PDF : 3 Pages
| |||
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
• Features
• 175 MHz
• 12.5 VOLTS
• POUT = 15 WATTS
• Gp = 12 dB MINIMUM
• INPUT IMPEDANCE MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1261 is a Class C 12.5V epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This
devices utilizes a gold metallized, emitter ballasted die
geometry for superior reliability and infinite VSWR capability.
MS1261
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
36
18
36
4.0
2.5
34
+200
-65 to +150
8.75
Unit
V
V
V
V
A
W
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Share Link: 