MS1263 查看數據表（PDF） - Advanced Power Technology
零件编号
产品描述 (功能)
比赛名单
MS1263 Datasheet PDF : 3 Pages
| |||
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTOR
UHF MOBILE APPLICATIONS
Features
• 512 MHz
• 12.5 VOLTS
• POUT = 15 W MINIMUM
• GP = 7.8 dB
• INPUT MATCHED
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1263 is a NPN silicon RF power transistor designed for
12.5-volt UHF amplifier applications operating to 512 MHz. The
MS1263 has internal impedance matching for broadband
operation and diffused emitter ballast for high load VSWR
tolerance.
MS1263
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PTOT
TSTG
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Thermal Data
RθJC
Thermal Resistance Junction-case
Value
36
16
4.0
3.4
370.5
-65 to +150
+200
4.6
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Share Link: 