MS1279 查看數據表（PDF） - Advanced Power Technology
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MS1279 Datasheet PDF : 4 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170- 230 MHz
• 25 VOLTS
• POUT = 20 WATTS
• GP = 8.0 dB GAIN MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1279 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in VHF and Band III television
transmitters and transposers.
MS1279
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCES
VEBO
IC
PDISS
TJ
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
35
60
4.0
8.0
140
+200
-65 to +150
1.5
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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