¡ Semiconductor
MSM7602
Parameter
Symbol
Condition
(VDD = 4.5 V to 5.5 V, Ta = –40˚C to +85˚C)
Min. Typ. Max. Unit
High Level Output Voltage
Low Level Output Voltage
High Level Input Current
VOH IOH = 40 mA
VOL IOL = 1.6 mA
IIH
VIH = VDD
MS with pull-down
4.2
—
VDD
V
0
—
0.4
V
—
0.1
10 mA
10
100
200 mA
Low Level Input Current
IIL
VIL = VSS
SF1, SF2 with pull-up
–10
–0.1
–100 –50
— mA
–10 mA
High Level Output Leakage Current IOZH VOH = VDD
—
0.1
10 mA
PD15 to PD0
–100
–50
–10 mA
Low Level Output Leakage Current IOZL VOL = VSS
with pull-up
Input other than
–10
–0.1
—
mA
the above
Power Supply Current (Operating) IDDO
—
Input Capacitance
IDDS PWDWN = "L"
—
30
45 mA
—
10
50
mA
Input Capacitance
CI
—
—
—
15
pF
Output Load Capacitance
CLOAD
—
—
—
20
pF
Echo Canceler Characteristics (Refer to Characteristics Diagram)
Parameter
Echo Attenuation
Cancelable Echo Delay Time for a
Single Chip or a Master Chip in a
Cascade
Cancelable Echo Delay Time for a
Slave Chip in a Cascade
Symbol
Condition
RIN = –10 dBm0
(5 kHz band white noise)
E. R. L. (echo return loss)
LRES
= 6 dB
TD = 20 ms
ATT, GC, NLP: OFF
TD
RIN = –10 dBm0
(5 kHz band white noise)
E. R. L. = 6 dB
TDS ATT, GC, NLP: OFF
Min. Typ.
—
30
—
—
—
—
Max. Unit
—
dB
23 ms
31 ms
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