MSS50-1200(1995) 查看數據表（PDF） - STMicroelectronics

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MSS50-1200
(Rev.:1995)

THYRISTOR MODULE

STMicroelectronics 

Fig. 1 : Maximun RMS power dissipation versus RMS

on-state current.

(F= 50 Hz)

P(W)

=1 8 0o

=1 20o

=9 0o

=6 0o

=3 0o

IT(RMS)(A)

MSS50

Fig. 2 : Correlation between maximum RMS power dis-

sipation and maximum allowable temperature (Tamb)

for different thermal resistances heatsink + contact.

P (W)

Rth=OoC/W

Rth=O.75oC/W

Rth=1.0oC/W

Rth=1.5oC/W

Tamb(oC)

Fig. 3 : RMS on-state current versus case temperature.

I T(R MS )(A)

=180o

Fig. 4: Thermal transient impedance junction to case

versus pulse duration.

Zth(j-c)(oC/W)

Tcase(o C)

tp(s)

Fig. 5 : Relative variation of gate trigger and holding

current versus junction temperature.

Igt;Ih [Tj] / Igt; Ih [Tj=25oC]

Igt

Fig. 6 : Non repetitive surge peak on-state current ver-

sus number of cycles.

ITSM(A)

Tj initial = 25 OC

Ih

Tj(oC)

Number of cycles

3/6

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