MSS1P5 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

MSS1P5

Surface Mount Schottky Barrier Rectifiers

Vishay Semiconductors 

www.vishay.com

10

TJ = 150 °C

1 TJ = 125 °C

0.1

TJ = 25 °C

TJ = -40 °C

0.01

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

MSS1P5, MSS1P6

Vishay General Semiconductor

1000

100

10

0.1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

1000

100

TJ = 150 °C

10

1

TJ = 125 °C

0.1

0.01

TJ = 25 °C

0.001

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics

1000

100

Junction to Ambient

10

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

1000

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

MicroSMP (DO-219AD)

Cathode Band

0.059 (1.50)

0.043 (1.10)

0.030 (0.75)

0.022 (0.55)

0.055 (1.40)

0.047 (1.20)

0.039 (0.98)

0.031 (0.78)

0.030 (0.75)

0.022 (0.55)

0.091 (2.30)

0.083 (2.10)

0.106 (2.70)

0.091 (2.30)

Mounting Pad Layout

0.079

(2.00)

0.032

(0.80)

0.029 (0.73)

0.025 (0.63)

0.011 (0.27)

0.005 (0.12)

0.043

(1.10)

0.020 (0.50)

0.032

(0.80)

Revision: 03-May-2018

3

Document Number: 89018

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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