MX10EXA 查看數據表（PDF） - Macronix International

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MX10EXA

XA 16-bit Microcontroller Family 64K Flash/2K RAM, Watchdog, 2UARTs

Macronix International 

FLASH EPROM MEMORY

FEATURES

MX10EXA

GENERAL DESCRIPTION

The XA Flash memory augments EPROM functionality

with in-circuit electrical erasure and programming. The

Flash can be read and written as bytes. The Chip Erase

operation will erase the entire program memory. The Block

Erase function can erase any single Flash block. In-cir-

cuit programming and standard parallel programming are

both available. On-chip erase and write timing genera-

tion contribute to a user friendly programming interface.

The XA Flash reliably stores memory contents even af-

ter 10,000 erase and program cycles. The cell is designed

to optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide pro-

cessing and low internal electric fields for erase and pro-

gramming operations produces reliable cycling. For In-

System Programming, the XA can use a single +5 V

power supply. Faster In-system Programming may be

obtained, if required, through the use of a+12V VPP sup-

ply. Parallel programming (using separate programming

hardware) uses a+12V VPP supply.

• Flash EPROM internal program memory with Block

Erase.

• Internal 2k byte fixed boot ROM, containing low-level

programming routines and a default loader. The Boot

ROM can be turned off to provide access to the full 64k

byte Flash memory.

• Boot vector allows user provided Flash loader code to

reside anywhere in the Flash memory space. This

configuration provides flexibility to the user.

• Default loader in Boot ROM allows programming via the

serial port without the need for a user provided loader.

• Up to 1Mbyte external program memory if the internal

program memory is disabled(EA=0).

• Programming and erase voltage VPP = VDD or 12V

±5% for ISP, 12V ±5% for parallel programming.Using

12V VPP for ISP may improve programming and erase

time.

• Read/Programming/Erase:

- Byte-wise read (60 ns access time at 4.5 V).

- Byte Programming (1-2 minutes for 64 K flash,

depending on clock frequency).

• In-circuit programming via user selected method, typi-

cally RS232 or parallel I/O port interface.

• Programmable security for the code in the Flash

• 10,000 minimum erase/program cycles

• 10 year minimum data retention.

P/N:PM0625 Specifications subject to change without notice, contact your sales representatives for the most update information. REV. 1.0, JUL. 01, 2005

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