NCP1000P 查看數據表（PDF） - ON Semiconductor
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NCP1000P Datasheet PDF : 14 Pages
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NCP1000, NCP1001, NCP1002
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max Unit
POWER SWITCH CIRCUIT
Power Switch Circuit On−State Resistance
NCP1000 (ID = 50 mA)
TJ = 25°C
TJ = 125°C (Note 8)
NCP1001 (ID = 100 mA)
TJ = 25°C
TJ = 125°C (Note 8)
NCP1002 (ID = 150 mA)
TJ = 25°C
TJ = 125°C (Note 8)
Power Switch Circuit Breakdown Voltage
(ID(off) = 100 mA, TJ = 25°C)
Power Switch Circuit Off−State Leakage Current (VDS = 650 V)
TJ = 25°C
TJ = −40°C to 125°C
Switching Characteristics (VDS = 50 V, RL set for ID = 0.7 IIim)
Turn−on Time (90% to 10%)
Turn−off Time (10% to 90%)
R(on)
V(BR)
I(off)
ton
toff
W
−
13
18
−
24
36
−
7.0
9.0
−
14
18
−
4.0
6.0
−
8.0
12
700
−
−
V
mA
−
0.25
1.0
−
−
50
ns
−
50
−
−
50
−
CURRENT LIMIT AND THERMAL PROTECTION
Current Limit Threshold (TJ = 25°C) (Note 9)
NCP1000
NCP1001
NCP1002
Ilim
A
0.42 0.48 0.54
0.84 0.96 1.08
1.26 1.43
1.6
Current Limit, Peak Switch Current
NCP1000 (di/dt = 100 mA/ms)
NCP1001 (di/dt = 200 mA/ms)
NCP1002 (di/dt = 300 mA/ms)
Ipk
A
−
0.500
−
−
1.000
−
−
1.500
−
Opto Fail−safe Protection (Figure 12)
TJ = 25°C
TJ = 0°C to 125°C
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
(Leading Edge Blanking plus Current Limit Delay)
IOfail
tPLH
mA
−
18
25
10
−
35
−
220
−
ns
Thermal Protection (Note 6, 8)
Shutdown (Junction Temperature Increasing)
Hysteresis (Junction Temperature Decreasing)
°C
tsd
125
140
−
tH
−
30
−
TOTAL DEVICE (Pin 1)
Power Supply Current After UVLO Turn−On
Power Switch Circuit Enabled
NCP1000
NCP1001
NCP1002
Power Switch Circuit Disabled
mA
ICC1
−
1.2
1.6
−
1.4
1.8
−
1.6
2.0
ICC2
0.6
1.0
1.25
6. Maximum package power dissipation limits must be observed.
7. Tested junction temperature range for this device series:
Tlow = −40°C Thigh = +125°C
8. Guaranteed by design only.
9. Actual peak switch current is increased due to the propagation delay time and the di/dt (see Figure 16).
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