NCP362(2009) 查看數據表（PDF） - ON Semiconductor
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NCP362
(Rev.:2009)
(Rev.:2009)
ON Semiconductor
NCP362 Datasheet PDF : 16 Pages
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NCP362
ELECTRICAL CHARACTERISTICS
(Min/Max limits values (−40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.)
Characteristic
Symbol
Conditions
Min Typ
Max Unit
Input Voltage Range
Undervoltage Lockout Threshold
Uvervoltage Lockout Hysteresis
Overvoltage Lockout Threshold
Overvoltage Lockout Hysteresis
Vin versus Vout Dopout
Overcurrent Limit
Supply Quiescent Current
Standby Current
Zero Gate Voltage Drain Current
FLAG Output Low Voltage
Vin
UVLO
UVLOhyst
OVLO
OVLOhyst
Vdrop
Ilim
Idd
Istd
IDSS
Volflag
Vin falls below UVLO threshold
Vin rises above OVLO threshold
Vin = 5 V, I charge = 500 mA
Vin = 5 V
No Load, Vin = 5.25 V
Vin = 5 V, EN = 1.2 V
VDS = 20 V, VGS = 0 V
Vin > OVLO
Sink 1 mA on FLAG pin
1.2
20
V
2.85 3.0 3.15 V
50
70
90 mV
5.43 5.675 5.9 V
50 100 125 mV
150 200 mV
550 750 950 mA
20
35 mA
26
37 mA
0.08
mA
400 mV
FLAG Leakage Current
EN Voltage High
EN Voltage Low
EN Leakage Current
FLAGleak
Vih
Vil
ENleak
FLAG level = 5 V
Vin from 3.3 V to 5.5 V
Vin from 3.3 V to 5.5 V
EN = 5.5 V or GND
5.0
nA
1.2
V
0.55 V
170
nA
TIMINGS
Start Up Delay
ton
From Vin > UVLO to Vout = 0.8xVin, See Fig 3 & 9
FLAG going up Delay
tstart
From Vin > UVLO to FLAG = 1.2 V, See Fig 3 & 10
Output Turn Off Time
toff
From Vin > OVLO to Vout ≤ 0.3 V, See Fig 4 & 11
Vin increasing from 5 V to 8 V at 3 V/ms.
Alert Delay
tstop
From Vin > OVLO to FLAG ≤ 0.4 V, See Fig 4 & 12
Vin increasing from 5 V to 8 V at 3 V/ms
Disable Time
tdis
From EN 0.4 to 1.2V to Vout ≤ 0.3 V, See Fig 5 & 13
Vin = 4.75 V.
Thermal Shutdown Temperature
Tsd
Thermal Shutdown Hysteresis
Tsdhyst
ESD DIODES (TA = 25°C, unless otherwise noted)
Capacitance (Note 7)
C
Pin VBUS TVS
Pins D+ & D−
4.0
15 ms
3.0
ms
0.7 1.5 ms
1.0
ms
3.0
ms
150
°C
30
°C
pF
30
0.5 0.9
Clamping Voltage (Notes 5, 6, 7)
Pin VBUS TVS
Pins D+ & D−
Working Peak Reverse Voltage
(Note 7)
Pin VBUS TVS
Pins D+ & D−
VC
VRWM
@ IPP = 5.9 A
@ IPP = 1.0 A
V
23.7
9.8
V
12
5.0
Maximum Reverse Leakage
IR
Current
@ VRWM
1.0 mA
Breakdown Voltage (Note 4)
VBR
Pin VBUS TVS
Pins D+ & D−
@ IT = 1.0 mA
V
13.5
5.4
4. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 28 in ESD paragraph.
6. For test procedures see Figures 26 and 27: IEC61000−4−2 spec, diagram of ESD test setup and Application Note AND8307/D.
7. ESD diode parameters are guaranteed by design.
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