NE429M01 查看數據表（PDF） - NEC => Renesas Technology

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NE429M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC => Renesas Technology 

NE429M01

PRECAUTION

Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with

shottky barrier gate.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your NEC sales representative.

Soldering Method

Infrared Reflow

VPS

Wave Soldering

Partial Heating

Soldering Conditions

Package peak temperature: 235 °C or below

Time: 30 seconds or less (at 210 °C)

Count: 3, Exposure limit: NoneNote

Package peak temperature: 215 °C or below

Time: 40 seconds or less (at 200 °C)

Count: 3, Exposure limit: NoneNote

Soldering bath temperature: 260 °C or below

Time: 10 seconds or less

Count: 1, Exposure limit: NoneNote

Pin temperature: 300 °C

Time: 3 seconds or less (per side of device)

Exposure limit: NoneNote

Recommended Condition Symbol

IR35-00-3

VP15-00-3

WS60-00-1

–

Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.

Caution Do not use different soldering methods together (except for partial heating).

For details of recommended soldering conditions for surface mounting, refer to information document

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P12254EJ3V0DS00

9

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