NE71300N 查看數據表（PDF） - NEC => Renesas Technology
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NE71300N Datasheet PDF : 8 Pages
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NE71300
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
5
VGD
Gate to Drain Voltage
V
-6
VGS
Gate to Source Voltage
V
-5
IDS
Drain Current
mA
IDSS
PIN
RF Input (CW)
dBm
+15
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
PT2
Total Power Dissipation
mW
400
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on a copper heat sink.
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
POWER DERATING CURVE
400
300
200
100
0
50
100
150
200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 3 V
40
30
20
10
0
-2.0
-1.0
0
Gate to Source Voltage, VGS (V)
DC PERFORMANCE
VGS = 0 V
40
-0.2 V
30
20
-0.4 V
10
-0.6 V
0
1
2
3
4
5
Drain Voltage, VDS (V)
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