NE83C92 查看數據表（PDF） - Philips Electronics
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NE83C92 Datasheet PDF : 9 Pages
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Philips Semiconductors
Low-power coaxial Ethernet transceiver
Product specification
NE83C92
TIMING CHARACTERISTICS
VEE = –9V +6%; TA = 0 to 70°C, unless otherwise specified1. No external isolation diode on TXO.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
tRON
Receiver start up delay RXI to RX± (Figure 3)
First received bit on RX±
First validly timed bit on RX±
VRXI = –2V peak
tRD
Receiver prop. delay RXI to RX±
VRXI = –2V peak
tRR
Differential output rise time on RX± and CD±2,3
tRF
Differential output fall time on RX± and CD±2,3
tOS
Differential output settling time on RX± and CD±
to VOB = 40mV2 (see Figure 4)
tRJ
Receiver and cable total jitter
tRHI
Receiver high to idle time
Measured to +210mV
200
tRM
Rise and fall time matching on RX+ and CD+
tRF – tRR
tTST
Transmitter start-up delay TX± to TXO (Figure 5)
First transmitted bit on TXO
VTX+ = –1V peak
First validly timed bit
tTD
Transmitter prop delay TX± to TXO
(see Figure 5)
VTX+ = 1V peak
5
tTR
Transmitter rise time 10% to 90% (see Figure 5)
20
tTF
Transmitter fall time 10% to 90% (see Figure 5)
20
tTM
tTF – tTR mismatch5
tTS
Transmitter added skew4,5
tTON
Transmitter turn on pulse width (see Figure 5)
VTX± = 1V peak
10
tTOFF
Transmitter turn off pulse width (see Figure 5)
VTX+ = 1V peak
125
tCON
Collision turn on delay (see Figure 6)
0V to –2V step at RXI
tCOFF
Collision turn off delay (see Figure 6)
–2V to 0V step at RXI
tCHI
Collision high to idle time (see Figure 6)
Measured to +210mV
200
fCD
Collision frequency (see Figure 6)
8.5
tCP
Collision signal pulse width (see Figure 6)
35
tHON
Heartbeat turn on delay (see Figure 7)
0.6
tHW
Heartbeat test duration (see Figure 7)
0.5
tJA
Jabber activation delay measured from TX± to
CD± (see Figure 8)
20
tJR
Jabber reset delay measured from TX± to CD±
(see Figure 8)
250
LIMITS
TYP
3
20
5
5
1
±2
0.1
1
20
25
25
0
0
10
MAX
5
tRON +2
50
7
7
±6
850
±2
2
tTST + 2
50
30
30
±2
±2
35
200
13
16
850
11.5
70
1.6
1.5
60
650
UNIT
bits
bits
ns
ns
ns
µs
ns
ns
ns
bits
bits
ns
ns
ns
ns
ns
ns
ns
bits
bits
ns
MHz
ns
µs
µs
ms
ms
NOTES:
1. All typicals are for VEE = –9V and TA = 27°C.
2. Measured on secondary side of isolation transformer (see Figure 2). The transformer has a 1:1 turn ratio with an inductance between 30
and 100µH at 5MHz.
3. The rise and fall times are measured as the time required for the differential voltage to change from –225mV to +225mV, or +225mV to
–225mV, respectively.
4. Difference in propagation delay between rising and falling edges at TXO.
5. Not 100% tested in production.
1995 May 1
5
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