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NLX2G06 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
比赛名单
NLX2G06
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLX2G06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NLX2G06
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
TA = −555C
VCC
Test
TA = 255C
to +1255C
(V)
Condition
Min Typ Max Min Max Unit
tPZL
Propagation Delay
(Figures 3 and 4)
1.65−1.95 RL = R1 = 5000 W,
2.0 5.7 10.5 2.0
11
ns
CL = 15 pF
2.3−2.7
RL = R1 = 500 W,
CL = 50 pF
0.8 3.0 3.6 0.8 4.1
3.0−3.6
RL = R1 = 500 W,
CL = 50 pF
0.8 2.4 3.2 0.8 3.7
4.5−5.5
RL = R1 = 500 W,
CL = 50 pF
0.5 2.4 3.0 0.5 3.5
tPLZ
Propagation Delay
(Figures 3 and 4)
1.65−1.95
RL = R1 = 500 W,
CL = 50 pF
5.7 10.5
11
ns
2.3−2.7
RL = R1 = 500 W,
CL = 50 pF
3.8 3.6
4.1
3.0−3.6
RL = R1 = 500 W,
CL = 50 pF
2.9 3.2
3.7
4.5−5.5
RL = R1 = 500 W,
CL = 50 pF
1.2 3.0
3.5
CIN
Input Capacitance
5.5
VIN = 0 V or VCC
2.5
pF
COUT
Output Capacitance
5.5
VIN = 0 V or VCC
4
pF
CPD
Power Dissipation Capacitance
3.3
10 MHz
4
pF
(Note 6)
5.5
VIN = 0 V or VCC
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
A
50%
tPZL tPLZ
Y
50% VCC
VCC
GND
HIGH
IMPEDANCE
VOL +0.3 V
Figure 3. Switching Waveforms
PULSE
GENERATOR
VCC
DUT
RT
R1
CL
RL
VCC x 2
RT = ZOUT of pulse generator (typically 50 W)
Figure 4. Test Circuit
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