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NLX2G17MUTCG 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
比赛名单
NLX2G17MUTCG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLX2G17MUTCG Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NLX2G17
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
TA = 555C
VCC
Test
TA = 25 5C
to +1255C
(V)
Condition
Min Typ Max Min Max Unit
tPLH,
tPHL
Propagation Delay Input A to Output
1.65
RL = 1 MW,
CL = 15 pF
2.0 9.1 15 2.0 15.6 ns
1.8
RL = 1 MW,
2.0 7.6 12.5 2.0 13
CL = 15 pF
2.32.7
RL = 1 MW,
CL = 15 pF
1.0 5.0 9.0 1.0 9.5
3.03.6
RL = 1 MW,
CL = 15 pF
1.0 3.7 6.3 1.0 6.5
RL = 500 W,
CL = 50 pF
1.5 4.4 7.2 1.5 7.5
4.55.5
RL = 1 MW,
CL = 15 pF
0.5 3.1 5.2 0.5 5.5
RL = 500 W,
CL = 50 pF
0.8 3.7 5.9 0.8 6.2
CIN
Input Capacitance
5.5
VIN = 0 V or VCC
7.0
pF
CPD
Power Dissipation Capacitance
3.3
10 MHz
9.0
pF
(Note 6)
5.5
VIN = 0 V or VCC
11
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
A or B
50%
tPLH
VCC
GND
tPHL
Y
50% VCC
Figure 3. Switching Waveforms
VCC
PULSE
GENERATOR
DUT
RT
CL
RL
RT = ZOUT of pulse generator (typically 50 W)
Figure 4. Test Circuit
http://onsemi.com
4

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