NTE251 查看數據表（PDF） - NTE Electronics

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NTE251

Silicon Complementary Transistors Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max

OFF Characteristics

Collector–Emitter SustainingVoltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 1)

VCEO(sus) IC = 100mA, IB = 0

ICEO VCE = 50V, IE = 0

ICEX VCE = 100V, VBE(off) = 1.5V

VCE = 100V, VBE(off) = 1.5V,

TA = +150°C

IEBO VBE = 5V, IC = 0

100 –

–

–

– 1.0

–

– 0.5

–

– 5.0

–

– 2.0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

VBE(on)

VCE = 3V, IC = 10A

VCE = 3V, IC = 20A

IC = 10A, IB = 40mA

IC = 20A, IB = 200mA

IC = 20A, IB = 200mA

VCE = 3V, IC = 10A

750 – 18000

100 –

–

–

– 2.0

–

– 3.0

–

– 4.0

–

– 2.8

Small–Signal Current Gain

hfe VCE = 3V, IC = 10A, f = 1kHz

Magnitude of Common Emitter

Small–Signal Short–Circuit

|hfe| VCE = 3V, IC = 10A, f = 1MHz

Forward Current Transfer Ratio

300 –

–

4.0 –

–

Output Capacitance

NTE251

NTE252

Cob VCB = 10V, IE = 0, f = 0.1MHz

–

– 400

–

– 600

Unit

V

mA

mA

mA

mA

V

V

V

V

MHz

pF

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%

Schematic Diagram

C

C

B

B

E

NPN

E

PNP

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