GLT4160M04E-60J3(2000) 查看數據表（PDF） - G-Link Technology

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GLT4160M04E-60J3
(Rev.:2000)

4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-Link Technology  

G-LINK

GLT4160M04

4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Jan 2000 (Rev. 1.3)

Parameter

CAS Hold Time for CAS -before- RAS Cycle

WE to RAS precharge time ( CAS Before

RAS refresh )

WE to RAS hold time ( CAS Before RAS

refresh )

Transition Time

Refresh Period (2,048 cycles)

Refresh Period (S-Version)

RAS Pulse Width ( CAS Before RAS Self

refresh )

RAS precharge Time ( CAS Before RAS Self

refresh )

CAS Hold Time ( CAS Before RAS Self

refresh )

Symbol

tCHR

tWRP

tWRH

tT

tREF

tREFS

tRASS

tRPS

tCHS

60

Min. Max.

10

10

70

Min. Max.

15

10

10

10

2

50

2

50

32

32

128

128

100

100

110

130

-50

-50

Unit

ns

ns

ns

ns

ms

ms

µs

ns

ns

Notes

G-Link Technology

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

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G-Link Technology Corporation,Taiwan

6F, No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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