P4C1026 查看數據表（PDF） - Semiconductor Corporation
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P4C1026 Datasheet PDF : 10 Pages
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POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
ICC Dynamic Operating Current*
Temperature
Range
Commercial
Industrial
–15 –20 –25 –35
80 75 75 75
90 80 80 80
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL
P4C1026
Unit
mA
mA
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Test Conditions
VDR
ICCDR
tCDR
tR†
VCC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V or
VIN ≤ 0.2V
*TA = +125°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
Typ.*
Max
Min
VCC =
VCC =
Unit
2.0V 3.0V 2.0V 3.0V
2.0
V
10
15 250 500 µA
0
ns
tRC§
ns
DATA RETENTION WAVEFORM
Document # SRAM127 REV E
Page 3 of10
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