P4C165 查看數據表（PDF） - Semiconductor Corporation
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P4C165 Datasheet PDF : 9 Pages
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AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
tWC Write Cycle Time
tCW Chip Enable Time to End of Write
tAW Address Valid to End of Write
tAS Address Set-up Time
tWP Write Pulse Width
tAH Address Hold Time
tDW Data Valid to End of Write
tDH Date Hold Time
tWZ Write Enable to Output in High Z
tOW Output Active from End of Write
WRITE CYCLE NO. 1 (WE CONTROLLED)(11)
P4C165
-15
-20
-25
-35 Unit
Min Max Min Max Min Max Min Max
15
20
25
35
ns
12
15
18
25
ns
12
15
18
25
ns
0
0
0
0
ns
12
15
18
20
ns
0
0
0
0
ns
9
11
13
15
ns
0
0
0
0
ns
7
8
10
14 ns
3
3
3
3
ns
Notes:
11. CE1 and WE must be LOW, and CE2 HIGH for WRITE cycle.
12. OE is LOW for this WRITE cycle to show tWZ and tOW.
13. If CE1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,
the output remains in a high impedance state.
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM117 Rev OR
5
Page 5 of 9
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