B80NF06 查看數據表（PDF） - STMicroelectronics

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比赛名单

B80NF06

N-channel 60V - 0.0065Ω- 80A TO-220/D² PAK/TO- 247 STripFET II™ Power MOSFET

STMicroelectronics 

STP80NF06 - STB80NF06 - STW80NF06

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (vgs = 0)

VGS Gate- source voltage

ID(1) Drain current (continuous) at TC = 25°C

ID

IDM (2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

EAS (3) Single pulse avalanche energy

Tstg Storage temperature

Tj

Max. operating junction temperature

1. Current limited by wire bonding

2. Pulse width limited by safe operating area

3. Starting Tj= 25°C, ID= 40A, VDD=40V

Table 2. Thermal data

Rthj-case Thermal resistance junction-case Max

Rthj-a Thermal resistance junction-ambient Max

Tl

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

60

±20

80

80

320

300

2

870

– 65 to 175

175

Unit

V

V

A

A

A

W

W/°C

mJ

°C

0.5

°C/W

62.5

°C/W

300

°C

3/14

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