PHW14N50E 查看數據表（PDF） - Philips Electronics
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PHW14N50E Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Drain current, ID (A)
20
18 VDS > ID X RDS(ON)
PHW14N50E
16
14
12
10
150 C
8
Tj = 25 C
6
4
2
0
0
1
2
3
4
5
6
7
8
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Transconductance, gfs (S)
14
13 VDS > ID X RDS(ON)
12
11
10
9
8
7
6
5
4
3
2
1
0
Tj = 25 C
PHW14N50E
150 C
0 2 4 6 8 10 12 14 16 18 20
Drain current, ID (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7 A; VGS = 10 V
Product specification
PHW14N50E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
10000
PHW14N50E
1000
Ciss
Coss
100
0.1
1
10
Drain-Source Voltage, VDS (V)
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
4
Rev 1.000
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