PMD11K100 查看數據表（PDF） - Inchange Semiconductor

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PMD11K100

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlingtion Power Transistor

isc Product Specification

PMD11K100

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -24mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -6A; IB=B -24mA

VBE(on) Base-Emitter On Voltage

ICER

Collector Cutoff current

IEBO

Emitter Cut-off current

IC= -6A; VCE= -3V

VCE= -100V; RBE= 1KΩ

VCE= -100V; RBE= 1KΩ, TC=150℃

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -6A; VCE= -3V

fT

Current-Gain—Bandwidth Product IC= -5A; VCE= -3V, f= 1kHz

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1.0MHz

MIN MAX UNIT

-100

V

-2.0

V

-2.8

V

-2.8

V

-1.0

-5.0

mA

-2.0

mA

800 20000

4

MHz

300

pF

isc Website：www.iscsemi.cn

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