Transistors
R5007ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
100
µA VDS=500V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.8 1.05 Ω ID=3.5A, VGS=10V
Forward transfer admittance
| Yfs | ∗ 2.5
−
−
S ID=3.5A, VDS=10V
Input capacitance
Ciss
−
500 −
pF VDS=25V
Output capacitance
Coss
−
300 −
pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
−
td(on) ∗
−
tr ∗ −
td(off) ∗
−
tf ∗ −
Qg ∗ −
Qgs ∗
−
Qgd ∗
−
23
−
20
−
22
−
50
−
25
−
13
−
3.5
−
5.5
−
pF f=1MHz
ns ID=3.5A, VDD 250V
ns VGS=10V
ns RL=71.4Ω
ns RG=10Ω
nC VDD 250V
ID=7A
nC VGS=10V
nC RL=35.7Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.5 V IS= 7A, VGS=0V
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